Carbon Nanotube | Abundance Distributions | Mapping of CNT FET
Field-effect transistors (FET) using CNTs are called "CNT FETs," and research into their practical use is being promoted. Of these CNT FETs, FETs using CNTs bridged as a dispersion liquid in a network manner between electrodes are anticipated to be applied to flexible devices. When Raman measurement is performed on the inter-electrode space, it can be seen that CNT is bridged between electrodes due to the CNT-specific spectrum that is obtained.
Following is an example of analysis of a Raman spectrum and line mapping of bridged CNT using Raman microscopy.
Raman microscopy was used to measure CNT bridged across the 50 µm inter-electrode space, and the G-band and RBM were detected.
50-point line mapping was performed between electrodes at 1 µm intervals from left to right. The distribution of bridged CNT can be seen.
Following is an example of analysis of a Raman spectrum and line mapping of bridged CNT using Raman microscopy.
Raman microscopy was used to measure CNT bridged across the 50 µm inter-electrode space, and the G-band and RBM were detected.
50-point line mapping was performed between electrodes at 1 µm intervals from left to right. The distribution of bridged CNT can be seen.
Fig. 1 Visible Enlarged Image and Raman Spectrum of Inter-Electrode CNT
Fig. 2 Distribution States of G-Band and RBM
The excitation wavelength of the Raman spectrum is 532 nm.
(Materials kindly provided by Dr. Shiraishi, Osaka University Graduate School of Engineering Science)
(Materials kindly provided by Dr. Shiraishi, Osaka University Graduate School of Engineering Science)
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