Product

Process 1: Forming back electrode

Evaluation method / Instrument required:

• Back electrode film thickness measurements / µEDX
• Surface observation of Mo back electrode (Na diffusion) / SPM

Process 2: p1 patterning

Process 3: Forming Cu/In/Ga (p-type light absorption layer) film

Evaluation method / Instrument required:

• Composition analysis and film thickness measurements / µEDX
• Chemical bonding status in surface/depth directions / XPS
• Composition analysis / ICP
• Orientation measurement of CIGS film / XRD

Process 4: Selenation, sulfuration

Evaluation method / Instrument required:

• Composition analysis and film thickness measurements / µEDX
• Chemical bonding status in surface/depth directions / XPS
• Composition analysis / ICP
• Orientation measurement of CIGS film / XRD
• Annealing process observation / composition analysis in depth directions / SEM

Process 5: n-type high resistance buffer layer

Evaluation method / Instrument required:

• Composition analysis and film thickness measurements / µEDX
• Chemical bonding status in surface/depth directions / XPS
• Composition analysis / ICP
• Orientation measurement of CIGS film / XRD
• Annealing process observation / composition analysis in depth directions / SEM

Process 6: p2 patterning

Evaluation method / Instrument required:

• Thin film hardness measurements / DUH (Patterning optimization)

Process 7: Forming front electrode

Evaluation method / Instrument required:

• Composition analysis of Al or B-doped ZnO / EPMA, ICP

Process 8: p3 patterning

Evaluation method / Instrument required:

• Reflectance and transmission measurements / SolidSpec

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