Band Gap Measurement of Polycrystalline Silicon Wafer

In the research of semiconductors, one of the fundamental physical quantities that are typically measured is band gap, as it is used to help determine electrical conductivity. The band gap of silicon wafer is located in the approximate wavelength range of 1000 - 1200 nm. When measurements are conducted using a typical ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer, noise is easily generated due to the reduced sensitivity of the detector in this region. To satisfy the demand for a detector with greater sensitivity in this wavelength region, we developed the MPC-603 large sample compartment with built-in integrating sphere containing three detectors, thereby achieving high-sensitivity measurement over the entire region from the ultraviolet to the near-infrared wavelengths.
Here, using the band gap calculation Excel spreadsheet macro (option), we introduce an example of band gap determination in a polycrystalline silicon wafer commonly used in solar cells, etc.