3D-DIC Analysis in Impact Test of Silicon Wafer

Introduction

As the main material for semiconductor devices, silicon wafers (hereinafter, Si wafers) are the most important basic material in the electronic industry. Si wafers are manufactured by applying polishing, heat treatment and other processes to thin sheets (wafers) sliced from single crystal ingots of silicon (Si). In recent years, demand for semiconductor devices such as flash memories and LSIs has increased explosively, and higher throughput is also required in the manufacturing process in order to satisfy this continually-increasing demand. Use of larger-diameter Si wafers is progressing with the aim of increasing the number of devices that can be manufactured from each Si wafer, and this has made large contributions to both higher throughput and cost reduction. However, recent Si wafers have reached a size of φ300 mm but have a thickness of only 1mm or less, and great care is necessary in handling these hard, brittle Si wafers. An accurate knowledge of the size and distribution of strain at the wafer surface until a Si wafer is destroyed is necessary in order to improve wafer handling technologies, but because destruction of Si wafers is a high-speed phenomenon, adequate information could not be obtained with the conventional techniques. In this example, high-speed deformation of Si wafers was visualized by 3D-DIC analysis by observing the destruction of Si wafers from two directions using two Hyper Vision HPV-X2 high-speed video cameras.

May 17, 2018 GMT